Metrology platform for the semiconductor industry
CELS-a10 is a next-generation nano-stabilized metrology platform enabling co-registered, multi-modal optical measurements on advanced semiconductor and hybrid photonic-electronic devices.
The system solves a critical bottleneck in heterogeneous integration:
The inability to reliably correlate structural, optical, and material properties on identical coordinates under industrially relevant conditions.
By unifying high-precision wafer stabilization with multi-modal nano-optical measurement, the platform reduces correlation error, accelerates process modeling, and improves yield learning cycles.
Empowering Businesses with Cutting-Edge Solutions
Multi-Spectroscopy Metrology – CELS-a10
CELS-a10 is a high-precision ultra-high vacuum (UHV) analysis platform engineered for semiconductor R&D and advanced process control. The system combines a non-magnetic chamber architecture with vacuum levels down to 10⁻¹⁰–10⁻¹¹ mbar after bake-out, ensuring maximum sensitivity for surface and spectral measurements.
A precision electron beam source (200 eV – 15 keV) delivers 80 nm beam spot size with flexible working distances up to 50-60 mm, enabling highly localized excitation and analysis. The integrated load-lock, preparation, and main chamber assemblies support efficient wafer handling and automated workflows.
CELS-a10 supports both high-resolution imaging and spectral measurements (390–1100 nm, spectral resolution of 0.06 nm and angular resolution of <0.04°), while wafer positioning accuracy below 200 nm enables precise spatial characterization. The system is fully controlled via CELS-Soft, with Linux/Windows compatibility and remote operation, providing a powerful and flexible platform for next-generation semiconductor materials analysis.
Key functionalities
CELS-a10
nm- and sub-nm resolution
- Complementary Spectroscopy / Plasmon Spectroscopy
- Surface Scanning Spectroscopy
- Photo-Luminescence (PL)
- Cathodo-Luminescence (CL)
- Electro-Luminescence (EL)
- Angle-Resolved PL, CL and EL Spectroscopies
- Spectroscopic Ellipsometry (SE)
- Elastic & Inelastic Scattering Of Light / Brillouin- And Raman Scattering
- M-line Spectroscopy
All measurements possible
@ Temperature from 15°K to 900°K (small probes in industrial R&D lab centers)
@ Temperatures from 220°K to 370°K / -50°C to 100°C (wafers)
@ in-vacuum or atmospheric conditions
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