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Set of Measurements & Tests

Spectroscopy Solutions for Contemporary and Advanced Materials
General Set of Measurements & Tests
- Cathodoluminescence:
Light emission by e-bombardment: also works with transparent materials. - Photoluminescence:
Light Emission by bombardment by light: Material specific; defect-specific. - Reflection of light from thin layers:
allows determination of thickness and variation of refractive index with wavelength - Transmission spectroscopy:
together with the previous two, it allows for determination of the dielectric function; determination of the “energy gap”, which is a characteristic of the material and defines the range of light transmission - Raman scattering:
material-specific, can also be measured on small structures with high spatial resolution and different material composition - Plasmon spectroscopy:
in thin layers, metal nano-particles, nano-structures, metallic metamaterials – measurement of plasmon resonances, angular dependences, imaging.
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For Manufacturers - Technique Mapping
The table below summarizes
key characteristic measurements in demand by manufacturers in Semiconductor Industry & Material Science;
key techniques used for the corresponding measurements;
Instruments which apply the techniques.
Materials, which can be investigated:
Semiconductors (e.g. Si, Ge, SiGe, GaN, GaP etc.)
Metals (Au, Ag etc)
Ceramics (e.g. SiC, SiN, TiN)
Dielectrics
| TECHNIQUE | INFORMATION REVEALED | WHAT I CAN MEASURE | INSTRUMENT | |
| 1 | PL (UV) | Bandgap Exciton peaks Defect luminescence maps (Basal Plane Dislocations, BPDs and Stacking Faults, SFs) | Electronic structure Defects Optical properties | CELS-a10, RM-5, CELS-vs10 |
| 2 | CL (electron-beam PL) | High-res defect luminescence maps (SF, micropipes) | Defects | CELS-a10, CELS-vs10 (with SEM) |
| 3 | Electroluminescence (EL) | Band-to-band emission under bias (device junctions) | Electrical properties | CELS-a10, CELS-vs10 |
| 4 | Raman / Brillouin | Polytype Identification (4H vs 6H peaks) Strain Phonons | Cristallinity Strain Electronic structure Stoichiometry | CELS-a10, RM-7 (upgrade), CELS-vs10 |
| 5 | Spectroscopic Ellipsometry / Reflectometry | Layer thickness Refractive index Surface roughness Doping (via n,k) | Physical thickness of materials Morphology / topography Compositional / chemical property (doping) Optical properties of materials | RM-5/7 |
| 6 | M-line Spectroscopy | Waveguide mode dispersion → film index/thickness (waveguides) | Photonic properties Optical properties of materials | CELS-a10, RM-5 |
| 7 | C–V Profiling | Doping vs Depth (via Schottky/MOS C–V) | Compositional / chemical properties (doping) Electrical / optical properties | Not built-in; requires external setup (Analytics can advise) |
| 8 | Hall / Resistivity Mapping | Carrier concentration Mobility Uniformity | Compositional / Chemical properties Topography | External measurement |
| 9 | DLTS / PICTS | Trap energy levels and concentrations | Compositional / Chemical properties | External measurement |
| 10 | XPS / Auger | Surface composition Chemical states | Compositional / Chemical properties | CELS (if fitted with XPS source) |
| 11 | SEM / OM / DIC | Surface defects (scratches, micropipes, contamination) | Morphology / topography | Not offered (standard microscope/SEM) |
| 12 | XRT (X-ray topography) | Subsurface strain fields (dislocations, SFs) | Morphology / topography | Not offered (specialized systems) |
| 13 | OCT (Optical coherence) | 3D subsurface imaging of inclusions/voids | Morphology / topography | Not offered |
Use Cases. Design and test your idea
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Cathodo-luminescence
Diffraction and Reflection
Raman spectroscopy
GaN
Cathodo-Luminescence
GaN exhibits intense broadband emission by bombardment by an electron beam. The spectra here demonstrate CL from MOCVD-GaN/Saphire obtained in HV 10^-7 mbar under Excitation by e-gun 3 kV with Grating monochromator 600 gr/mm, TEC CCD.

Meta-materials – Fishnet Au structure
Reflection and Diffraction
Fishnet structure has
1. Negative refractive index (n < 0) – The coupled plasmonic currents in the layered “fishnet” structure generate simultaneously negative permittivity and permeability, producing a negative index of refraction.
2. Optical-frequency operation – the structures demonstrate negative index in NIR/VIS regime, enabled by plasmonic coupling between the patterned metal layers.



GaN and SiC
Raman spectroscopy
Raman mapping of SiC can identify polytype inclusions, strain and defect types (e.g. micropipes cause local peak shifts/intensity changes).
The technique is also very successful for GaN for investigation of crystallinity, strain, stoichiometry, defects, contaminations and many other properties.

Enabling Advanced Analysis of Silicon Photonics Structures and Materials

Photonic crystal sensors

Large Si ring resonators on SiOx membrane

2D photonic crystals

Si Ring resonator

Photonics and SERS sensors

Si/SiOx photonic crystals

2D photonic crystals w. modified waveguides

CMOS compatible membranes

0D materials – Ge clusters in Si matrix

Si-on-SiOx waveguides

Si Ring resonator

CMOS compatible membranes

Large Si ring resonators on SiOx membrane

2D photonic crystals

Photonic crystal sensors

0D materials – Ge clusters in Si matrix

Si/SiOx photonic crystals

Si-on-SiOx waveguides

Photonics and SERS sensors

2D photonic crystals w. modified waveguides
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Photonic materials & Structures
Hybrid materials & hybrid wafers
Meta-materials
1D / 2D / 3D materials & structure
Si photonics
CONTACT US
Photonic materials & Structures
Hybrid materials & hybrid wafers
Meta-materials
1D / 2D / 3D materials & structure
Si photonics
CONTACT US
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- You provide the samples; we perform the measurements.
- Access high-quality, integrated CELS data without large upfront equipment investment.
- Full CELS or RM-5 system integration or integration of key optical modules.
On-site Installation, Training & Support
