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We have 18k+ Customers word-wide

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Set of Measurements & Tests

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Spectroscopy Solutions for Contemporary and Advanced Materials

[ optical spectroscopy ]

General Set of Measurements & Tests

  • Cathodoluminescence:
    Light emission by e-bombardment: also works with transparent materials.
  • Photoluminescence:
    Light Emission by bombardment by light: Material specific; defect-specific.
  • Reflection of light from thin layers:
    allows determination of thickness and variation of refractive index with wavelength
  • Transmission spectroscopy:
    together with the previous two, it allows for determination of the dielectric function; determination of the “energy gap”, which is a characteristic of the material and defines the range of light transmission
  • Raman scattering:
    material-specific, can also be measured on small structures with high spatial resolution and  different material composition
  • Plasmon spectroscopy:
    in thin layers, metal nano-particles, nano-structures, metallic metamaterials – measurement of plasmon resonances, angular dependences, imaging.
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This is what we do, executed with perfection. Our dedication and expertise ensure every detail is flawless, setting the standard in our pursuit of excellence.
STEP 01

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Delivering innovative solutions for oil and gas exploration, production, and refining, with a focus on efficiency and safety.
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For Manufacturers - Technique Mapping

The table below summarizes
key characteristic measurements in demand by manufacturers in Semiconductor Industry & Material Science;
key techniques used for the corresponding measurements;
Instruments which apply the techniques.

Materials, which can be investigated:
Semiconductors (e.g. Si, Ge, SiGe, GaN, GaP etc.)
Metals (Au, Ag etc)
Ceramics (e.g. SiC, SiN, TiN)
Dielectrics

TECHNIQUE INFORMATION REVEALED WHAT I CAN MEASURE INSTRUMENT
1 PL (UV) Bandgap Exciton peaks Defect luminescence maps (Basal Plane Dislocations, BPDs and Stacking Faults, SFs) Electronic structure Defects Optical properties CELS-a10, RM-5, CELS-vs10
2 CL (electron-beam PL) High-res defect luminescence maps (SF, micropipes) Defects CELS-a10, CELS-vs10 (with SEM)
3 Electroluminescence (EL) Band-to-band emission under bias (device junctions) Electrical properties CELS-a10, CELS-vs10
4 Raman / Brillouin Polytype Identification (4H vs 6H peaks) Strain Phonons Cristallinity Strain Electronic structure Stoichiometry CELS-a10, RM-7 (upgrade), CELS-vs10
5 Spectroscopic Ellipsometry / Reflectometry Layer thickness Refractive index Surface roughness Doping (via n,k) Physical thickness of materials Morphology / topography Compositional / chemical property (doping) Optical properties of materials RM-5/7
6 M-line Spectroscopy Waveguide mode dispersion → film index/thickness (waveguides) Photonic properties Optical properties of materials CELS-a10, RM-5
7 C–V Profiling Doping vs Depth (via Schottky/MOS C–V) Compositional / chemical properties (doping) Electrical / optical properties Not built-in; requires external setup (Analytics can advise)
8 Hall / Resistivity Mapping Carrier concentration Mobility Uniformity Compositional / Chemical properties Topography External measurement
9 DLTS / PICTS Trap energy levels and concentrations Compositional / Chemical properties External measurement
10 XPS / Auger Surface composition Chemical states Compositional / Chemical properties CELS (if fitted with XPS source)
11 SEM / OM / DIC Surface defects (scratches, micropipes, contamination) Morphology / topography Not offered (standard microscope/SEM)
12 XRT (X-ray topography) Subsurface strain fields (dislocations, SFs) Morphology / topography Not offered (specialized systems)
13 OCT (Optical coherence) 3D subsurface imaging of inclusions/voids Morphology / topography Not offered
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Use Cases. Design and test your idea

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01 - gallium nitride

Cathodo-luminescence

GaN exhibits intense broadband emission by bombardment by an electron beam. The spectra here demonstrate CL from MOCVD-GaN/Saphire obtained in HV 10^-7 mbar under Excitation by e-gun 3 kV with Grating monochromator 600 gr/mm, TEC CCD.
Cathodo-luminescence
Cathodo-luminescence
02 - meta-materials

Diffraction and Reflection

Fishnet structure has 1. Negative refractive index (n < 0) - The coupled plasmonic currents in the layered “fishnet” structure generate simultaneously negative permittivity and permeability, producing a negative index of refraction. 2. Optical-frequency operation - the structures demonstrate negative index in NIR/VIS regime, enabled by plasmonic coupling between the patterned metal layers.
Diffraction and Reflection
Diffraction and Reflection
03

Raman spectroscopy

Raman mapping of SiC can identify polytype inclusions, strain and defect types (e.g. micropipes cause local peak shifts/intensity changes).
Raman spectroscopy
Raman spectroscopy
GaN

Cathodo-Luminescence

GaN exhibits intense broadband emission by bombardment by an electron beam. The spectra here demonstrate CL from MOCVD-GaN/Saphire obtained in HV 10^-7 mbar under Excitation by e-gun 3 kV with Grating monochromator 600 gr/mm, TEC CCD.

Cathodo-luminescence GaN 1
Meta-materials – Fishnet Au structure

Reflection and Diffraction

Fishnet structure has
1. Negative refractive index (n < 0) – The coupled plasmonic currents in the layered “fishnet” structure generate simultaneously negative permittivity and permeability, producing a negative index of refraction.
2. Optical-frequency operation – the structures demonstrate negative index in NIR/VIS regime, enabled by plasmonic coupling between the patterned metal layers.

GaN and SiC

Raman spectroscopy

Raman mapping of SiC can identify polytype inclusions, strain and defect types (e.g. micropipes cause local peak shifts/intensity changes).

The technique is also very successful for GaN for investigation of crystallinity, strain, stoichiometry, defects, contaminations and many other properties.

examples

Enabling Advanced Analysis of Silicon Photonics Structures and Materials

Photonic crystal sensors

Large Si ring resonators on SiOx membrane

2D photonic crystals

Si Ring resonator

Photonics and SERS sensors

Si/SiOx photonic crystals

2D photonic crystals w. modified waveguides

CMOS compatible membranes

0D materials – Ge clusters in Si matrix

Si-on-SiOx waveguides

Si Ring resonator

CMOS compatible membranes

Large Si ring resonators on SiOx membrane

2D photonic crystals

Photonic crystal sensors

0D materials – Ge clusters in Si matrix

Si/SiOx photonic crystals

Si-on-SiOx waveguides

Photonics and SERS sensors

2D photonic crystals w. modified waveguides
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Photonic materials & Structures

Hybrid materials & hybrid wafers

Meta-materials

1D / 2D / 3D materials & structure

Si photonics

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Meet our Friendly Team Member

So, make the decision to move forward. Commit your decision to paper, just to bring it into focus. Then, go for it!

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  • You provide the samples; we perform the measurements.
  • Access high-quality, integrated CELS data without large upfront equipment investment.
  • Full CELS or RM-5 system integration or integration of key optical modules.

On-site Installation, Training & Support

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